AO4828 60v dual n-channel mosfet symbol v ds v gs i dm i ar, i as e ar, e as t j , t stg symbol typ max 48 62.5 74 110 r q jl 35 60 a repetitive avalanche energy 0.1mh b 18 mj w junction and storage temperature range a p d c 2 1.28 -55 to 150 t a =70c i d continuous drain current af maximum units parameter t a =25c t a =70c 60 maximum junction-to-ambient a steady-state 4.5 3.6 20 avalanche current b 19 c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w features v ds (v) = 60v i d = 4.5a (v gs = 10v) r ds(on) < 56m w (v gs = 10v) r ds(on) < 77m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4828 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in p wm applications. g2 d 2 s2 g1 d 1 s1 g1 s1 g2 s2 d1 d1 d2 d2 top view soic-8 top view bottom view pin1 alpha & omega semiconductor, ltd. www.aosmd.com
AO4828 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.1 3 v i d(on) 20 a 46 56 t j =125c 80 100 64 77 m w g fs 11 s v sd 0.74 1 v i s 3 a i sm 20 a c iss 450 540 pf c oss 60 pf c rss 25 pf r g 1.3 1.65 2 w q g (10v) 8.5 10.5 nc q g (4.5v) 4.3 5.5 nc q gs 1.6 nc q gd 2.2 nc t d(on) 4.7 ns t r 2.3 ns t d(off) 15.7 ns t f 1.9 ns t rr 27.5 35 ns q rr 32 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice v gs =10v, v ds =30v, i d =4.5a total gate charge gate drain charge v gs =0v, v ds =30v, f=1mhz switching parameters total gate charge gate source charge gate resistance input capacitance output capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =30v, r l =6.7 w , r gen =3 w turn-off fall time turn-on delaytime v gs =0v, v ds =0v, f=1mhz m w v gs =4.5v, i d =3a i s =1a,v gs =0v v ds =5v, i d =4.5a dynamic parameters pulsed body diode current b maximum body-diode continuous current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =60v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =4.5a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4.5a reverse transfer capacitance i f =4.5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev8: may 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4828 typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4.0v 10.0 v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 20 30 40 50 60 70 80 90 100 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v i d =3.0a i d =4.5a 40 60 80 100 120 140 160 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =4.5a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AO4828 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10 20 30 40 50 60 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =30v i d = 4.5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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